Control of particle generation in CVD reactor by ionization of source vapor

Two different ionization CVD reactors where the surface corona discharger i s used as the ion source, are developed and film preparation by a tetraetho xysilane/ozone atmospheric pressure CVD is arrempted. In the close-type rea ctor where the discharger is close to the substrate, discontinuous films wh ere thickness changes alternately and extremely from zero to a few microns in the distance of millimeter order are formed probably due to the charge o f ions accumulated on the surface of Si wafer. In the separate-type reactor where the discharger is distant from the substrate, films with uniform thi ckness are formed, and the film growth rate is 1.3-1.5 times higher than th at without discharge. The separate-type reactor prepared films with strong flow-like shape under conditions where films without flow-like shape are fo rmed in the common reactor. Nanometer-sized particles of 20-100 nm in diame ter, which have been generally generated without discharge, are not detecte d in the ionization CVD reactor.