Preparation and characterization of MOCVD thin films of indium tin oxide

Authors
Akinwunmi, OO Eleruja, MA Olowolafe, JO Adegboyega, GA Ajayi, EOB
Citation
Oo. Akinwunmi et al., Preparation and characterization of MOCVD thin films of indium tin oxide, OPT MATER, 13(2), 1999, pp. 255-259
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
OPTICAL MATERIALS
ISSN journal
09253467 → ACNP
Volume
13
Issue
2
Year of publication
1999
Pages
255 - 259
Database
ISI
SICI code
0925-3467(199911)13:2<255:PACOMT>2.0.ZU;2-7
Abstract
Indium Tin Oxide (ITO) was deposited by pyrolysis of mixed metal acetylacet onate (a single solid-source precursor). This study demonstrates that the p roperties of the as-deposited film depend on the deposition temperature. Fi lms with a resistivity of 7.2 x 10(-4) Omega cm, a visible transmission of over 80%, and a direct optical energy gap of 3.76 eV were deposited, (C) 19 99 Elsevier Science B.V. All rights reserved.