Indium Tin Oxide (ITO) was deposited by pyrolysis of mixed metal acetylacet
onate (a single solid-source precursor). This study demonstrates that the p
roperties of the as-deposited film depend on the deposition temperature. Fi
lms with a resistivity of 7.2 x 10(-4) Omega cm, a visible transmission of
over 80%, and a direct optical energy gap of 3.76 eV were deposited, (C) 19
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