II-VI semiconductors are of great importance due to their applications in v
arious electro-optic devices. CdSe is a suitable material for the fabricati
on of photovoltaic devices. We have prepared Cdse films by a sintering meth
od and studied for their applications in photovoltaic devices. The energy b
and gaps of these films are determined by reflection spectra in wavelength
range 400-900 nm. Current-voltage characteristics and X-ray diffraction pat
terns of these films are also reported. (C) 1999 Elsevier Science B.V. All
rights reserved.