Bandgaps of cadmium telluride sintered film

Cadmium telluride a II-VI semiconductor compound is considered to be one of the most promising materials for the fabrication of solar cells. From the analysis of absorption spectra, CdTe is found to have direct bandgap 1.45 e V and also have indirect bandgap E-g=1.66 eV in the same sample. CdTe film is prepared by a sintering technique and deposited on ultra clean glass sub strate. The absorption spectra of CdTe films are recorded by a Hitachi spec trophotometer, model U-3400, in the wavelength range 600-900 nm. (C) 1999 E lsevier Science B.V. All rights reserved.