Experimental and theoretical study of misfit dislocation development in low-mismatched heterostructures: application to GaAs/Ge

Authors
Putero, M Burle, N Pichaud, B
Citation
M. Putero et al., Experimental and theoretical study of misfit dislocation development in low-mismatched heterostructures: application to GaAs/Ge, PHIL MAG A, 79(11), 1999, pp. 2711-2724
Citations number
25
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS ANDMECHANICAL PROPERTIES
ISSN journal
13642804 → ACNP
Volume
79
Issue
11
Year of publication
1999
Pages
2711 - 2724
Database
ISI
SICI code
1364-2804(199911)79:11<2711:EATSOM>2.0.ZU;2-O
Abstract
The metastability of thin epitaxial layers on very-high-quality substrates is usual in semiconductor systems. A numerical study of the first relaxatio n stage in low-misfit heterostructures is proposed and applied to the GaAs/ Ge system. It is shown that growth conditions as well as cooling conditions are essential in determining the final state and the relaxation rate at am bient conditions.