Continuous-wave operation of InGaN multi-quantum-well laser diodes grown on an n-GaN substrate with a backside n-contact

Authors
Kuramoto, M Sasaoka, C Hisanaga, Y Kimura, A Yamaguchi, AA Sunakawa, H Kuroda, N Nido, M Usui, A Mizuta, M
Citation
M. Kuramoto et al., Continuous-wave operation of InGaN multi-quantum-well laser diodes grown on an n-GaN substrate with a backside n-contact, PHYS ST S-A, 176(1), 1999, pp. 35-38
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
00318965 → ACNP
Volume
176
Issue
1
Year of publication
1999
Pages
35 - 38
Database
ISI
SICI code
0031-8965(19991116)176:1<35:COOIML>2.0.ZU;2-R
Abstract
The continuous-wave operation at room temperature has been demonstrated for InGaN multiquantum-well (MQW) laser diodes (LDs) grown on facet-initiated epitaxial lateral overgrowth (FIELO) GaN substrates with a backside n-conta ct. The threshold current was 36 mA, the current density was 5.4 kA/cm(2), and the voltage was 7.5 V at the lasing threshold of a 2 mu m wide ridge-ge ometry diode with high-reflection dielectric-coated mirrors. The CW LDs suc cessfully operated up to 80 degrees C. The optical characteristics for LD s tructure has been studied and superiority of QW on FIELO GaN over sapphire was demonstrated.