346 nm emission from AlGaN multi-quantum-well light emitting diode

Authors
Nishida, T Kobayashi, N
Citation
T. Nishida et N. Kobayashi, 346 nm emission from AlGaN multi-quantum-well light emitting diode, PHYS ST S-A, 176(1), 1999, pp. 45-48
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
00318965 → ACNP
Volume
176
Issue
1
Year of publication
1999
Pages
45 - 48
Database
ISI
SICI code
0031-8965(19991116)176:1<45:3NEFAM>2.0.ZU;2-R
Abstract
To realize short wavelength light emitting diodes, nitride quantum structur es are studied. Control of the piezoelectric field and thickness design of wurtzite nitride quantum wells are important for band edge emission in the short wavelength region. By reducing the: strain between the AlGaN well and the barrier layers of multi-quantum wells, ultraviolet light emitting diod es operating at the wavelength of 346 nm were successfully fabricated.