Room-temperature continuous-wave operation of InGaN multiple quantum well laser diodes with an asymmetric waveguide structure

Room-temperature continuous-wave (cw) operation is demonstrated with InGaN multiple quantum well laser diodes which incorporate an asymmetric waveguid e structure. The laser heterostructure was grown on a-face sapphire substra tes by metalorganic chemical vapor deposition. Threshold currents as low as 107 mA with threshold voltages of 6.5 V have been obtained under cw condit ions at 20 degrees C. The emission wavelength is near 402 nm with output po wers greater than: one mW per facet. Under cw conditions laser oscillation is observed up to 25 degrees C. The room-temperature cw operation lifetimes , measured at a constant output power of 0.5 mW, are approximately one hour .