Room-temperature CW operation of GaInN multiple quantum well laser diodes with optimized indium content

Authors
Tsujimura, A Ishibashi, A Hasegawa, Y Kamiyama, S Kidoguchi, I Otsuka, N Miyanaga, R Sugahara, G Suzuki, M Kume, M Harafuji, K Ban, Y
Citation
A. Tsujimura et al., Room-temperature CW operation of GaInN multiple quantum well laser diodes with optimized indium content, PHYS ST S-A, 176(1), 1999, pp. 53-57
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
00318965 → ACNP
Volume
176
Issue
1
Year of publication
1999
Pages
53 - 57
Database
ISI
SICI code
0031-8965(19991116)176:1<53:RCOOGM>2.0.ZU;2-T
Abstract
The indium content of GaInN/GaN multiple quantum well (MQW) laser diodes (L Ds) was optimized by means of measurements of amplified spontaneous emissio n (AE) spectrum and threshold current density. The dependence of ASE spectr a on x in Ga1-xInxN (x = 0.07 to 0.11) MQW LDs suggested that low indium co ntent led to small band-gap inhomogeneity. The threshold current density of the LDs decreased with decreasing indium content. Ga0.93In0.07N/GaN MQW-LD s were operated with a threshold current density of 11 kA/cm(2) under CW co ndition at room temperature. It is necessary for GaN-based 400 nm band LDs to suppress the band-gap inhomogeneity in the GaInN MQW by optimizing the i ndium content.