Dielectric Bragg mirrors for InGaN surface-emitting lasers

An approach to the fabrication of InGaN surface-emitting lasers using later al epitaxial overgrowth (LEO) on patterned dielectric Bragg mirrors is desc ribed. The properties of SiO2/ZrO2 mirrors, annealed to simulate LEO condit ions, were investigated using reflectance spectroscopy, electron microscopy ,sputtered neutral mass spectrometry, and X-ray diffraction. The mirrors ar e shown to be sufficiently robust for the proposed application. We show tha t a blue-shift of the reflectivity stop-baud during annealing can be pre-co mpensated and that a slight reduction in peak reflectivity is related to th e formation of crystallite microstructure within the ZrO2 layers.