Mass production of high brightness blue and green LEDs by MOCVD

As more advances are made in the performance of GaN-based devices, a trend toward the use of large-scale MOCVD reactors for epitaxial growth of GaN-ba sed device structures is clear. In this paper ve describe the use of Emcore 's SpectraBlue(TM) reactor for large-scale manufacturing of blue and green LEDs. The high throughput growth of GaN-based LEDs is demonstrated without compromising LED uniformity or overall performance. In-situ control Of key parameters critical to the production of high qualify LEDs, such as buffer layer growth is now: feasible using in-situ reflectance spectroscopy. Film properties as well as LED device performance are discussed.