GaN/SiC quasi-substrates for GaN-based LEDs

GaN/SiC templates are evaluated as quasi-substrates for GaN device:technolo gy. The GaN/SiC templates offer quasi-homoepitaxial growth conditions and b enefit from general advantages of SIC substrates, i.e vertical device desig n; high thermal conductivity: low processing costs, etc. The thin HVPE-depo sited GaN layers significantly reduce thermal stress, bowing and cracking a s compared to thick GaN/sapphire quasi-substrates. The templates are assess ed from the performance of MOVPE grown UV-emitting GaN/InGaN double heteros tructure LEDs. The LEDs are grown directly on the quasi-substrates using pa rameters established for GaN/sapphire, technology Compared to InGaN/GaN/sap phire LEDs narrower electroluminescence and higher output powers are obtain ed.