Towards an AlGaN, solar-blind, p-i-n photodetector

Citation
Dl. Pulfrey et al., Towards an AlGaN, solar-blind, p-i-n photodetector, PHYS ST S-A, 176(1), 1999, pp. 169-173
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
00318965 → ACNP
Volume
176
Issue
1
Year of publication
1999
Pages
169 - 173
Database
ISI
SICI code
0031-8965(19991116)176:1<169:TAASPP>2.0.ZU;2-0
Abstract
A heterostructure diode, utilizing p- and i-Al0.33Ga0.67N layers on top of an n-GaN region, is investigated for its-potential as a solar-blind photode tector. The study, which is carried out via simulations using MEDICI, exami nes some techniques for suppressing the hole current-that is photogenerated in the low bandgap n-GaN material. The factors considered are: the: thickn ess and electron affinity of the i-Al0.33Ga0.67N layer; the addition of a t hin, n-doped AlGaN layer to widen the tunneling barrier for holes; and the creation of a thin region of low minority carrier lifetime at the heteroint erface to remove the holes by recombination. The results show that AlGaN/Ga N, p-i-n heterodiodes have considerable promise as solar-blind photodetecto rs.