A heterostructure diode, utilizing p- and i-Al0.33Ga0.67N layers on top of
an n-GaN region, is investigated for its-potential as a solar-blind photode
tector. The study, which is carried out via simulations using MEDICI, exami
nes some techniques for suppressing the hole current-that is photogenerated
in the low bandgap n-GaN material. The factors considered are: the: thickn
ess and electron affinity of the i-Al0.33Ga0.67N layer; the addition of a t
hin, n-doped AlGaN layer to widen the tunneling barrier for holes; and the
creation of a thin region of low minority carrier lifetime at the heteroint
erface to remove the holes by recombination. The results show that AlGaN/Ga
N, p-i-n heterodiodes have considerable promise as solar-blind photodetecto
rs.