Microwave simulation on the performance of high power GaN/AlGaN heterostructure field effect transistors

We present the results of the simulation of dc and microwave performance of a GaN/A1GaN heterostructure field effect transistors and compare the resul ts with recent record-breaking experimental data from Cree Research, Inc. O ur simulation results are in good agreement with the data on the Small sign al transistor performance. The calculated maximum stable power gain decreas es with frequency with a 3 dB per octave slope in agreement with experiment al results. The simulated values of the saturation power are somewhat less than experimentally measured values. This difference might be caused by sel f-heating, which is smaller at microwave frequencies than at dc.