MOVPE growth and luminescence properties of GaAsN alloys with higher nitrogen concentrations

Highly luminescent GaAsN alloy films have been successfully obtained with N concentrations up to 3.1% by metalorganic vapor phase epitaxy (MOVPE). The band-gap bowing parameter estimated from the photoluminescence (PL) peak e nergy is not constant but dependent on the N concentration; 24.0 eV for N < 1% and 17.0 eV for N > 1% at 20 KI and 22.4 eV: for N < 1% and 14.5 eV for N >1% at room temperature. From the characteristic features of the lumines cence properties, the: band-edge states are found to be much localized belo w the conduction band edge, and the emission process at low temperatures is associated with these localized states as in GaPN alloys.