Citation
Mh. Kim et al., Metalorganic molecular beam epitaxy of InGaN layers and their optical properties, PHYS ST S-A, 176(1), 1999, pp. 269-272
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
00318965
→ ACNP
Volume
176
Issue
1
Year of publication
1999
Pages
269 - 272
Database
ISI
SICI code
0031-8965(19991116)176:1<269:MMBEOI>2.0.ZU;2-X
Abstract
We report on the growth of InGaN/GaN heterostructures on the nitridated alp
ha-Al2O3 substrate using metalorganic molecular beam epitaxy (MOMBE) system
equipped with an N-2 rf-plasma cell. An In incorporation of 41% was achiev
ed without InN phase separation in thr InGaN film. The InGaN films showed p
hotoluminescence (PL) spectra corresponding to blue, green, and red colors
depending on the In composition. The XRD and PL measurements showed that th
e red emission from InGaN was originated from the phase-separated InN in th
e InGaN film.