InGaN/GaN MQW and Mg-doped GaN growth using a shutter control method by RF-molecular beam epitaxy

InGaN/GaN MQW and Mg-doped GaN were grown at a high growth temperature of 7 50 degrees C using a shutter control method (i.e. the periodically interrup ted nitrogen supply method) by the molecular beam epitaxy (MBE) using rf-pl asma nitrogen. A residual carrier density of 9.9 x 10(14) cm(-3) for undope d GaN was obtained. Higher order (third to fifth) satellite peaks of InGaN/ GaN MQW by double crystal X-ray diffraction (XRD), as well as a single peak photoluminescence emission at 460 nm were observed, indicating that a flat and good MQW was fabricated. The p-type carrier density of Mg-doped GaN wa s obtained in the range from 1.4 x 10(16) to 2.0 x 10(17) cm. P-type cm(-3) and 8.2 cm(2)/Vs, respectively, were achieved with a carrier density and m obility of 2.0 x 10(17) relatively low resistivity of 3.7 Omega cm.