Growth and characterization of thick GaAsN epilayers and GaInNAs/GaAs multiquantum wells

We report a study on the growth and characterization of thick CaAsN epilaye rs and GaInNAs/GaAs multiquantum wells (MQW) grown on GaAs by GSMBE. (004) and (422) X-ray diffraction show the good crystalline quality of the cohere ntly strained GaAsN epilayers with a nitrogen amount of 2.6%. Room temperat ure photoluminescence (RTPL) is observed for the ternary and the quaternary structures with a peak wavelength as long as 1.17 mu m and 1.34 mu m respe ctively. A post-growth in-situ or ex-situ annealing increases the RTPL peak intensity by a factor of up to 20 for the thick GaAsN layers and 10 for th e GaInNAs/GaAs MQW. The annealing induces also a blue shift in the peak wav elength in both cases. Although SIMS measurements show locally well defined quantum wells, cross-section TEM observation points out long-range distort ion of the GaInNAs/GaAs MQW structures.