On the impact of microstructure on luminescence of InGaN/GaN multi quantumwells grown by molecular beam epitaxy

Authors
Bottcher, T Einfeldt, S Figge, S Kirchner, V Heinke, H Hommel, D Rudloff, D Riemann, T Christen, J
Citation
T. Bottcher et al., On the impact of microstructure on luminescence of InGaN/GaN multi quantumwells grown by molecular beam epitaxy, PHYS ST S-A, 176(1), 1999, pp. 291-295
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
00318965 → ACNP
Volume
176
Issue
1
Year of publication
1999
Pages
291 - 295
Database
ISI
SICI code
0031-8965(19991116)176:1<291:OTIOMO>2.0.ZU;2-U
Abstract
Similar InxGa1-xNiGaN multi quantum wells (MQWs) have been grown by molecul ar beam epitaxy (MBE) on thick GaN template layers produced either by MBE o r metalorganic vapour phase epitaxy (;MOVPE). The templates differ signific antly in surface flatness obviously influencing the properties of the MQWs, as well as their microstructure and luminescence. In contrast to fully MBE -grown structures, samples grown on MOVPE template layers exhibit a lumines cence close to quantum well structures produced by MOVPE.