Indium incorporation and droplet formation during InGaN molecular beam epitaxy

General trends in In incorporation into InGaN ternary compounds during plas ma-enhanced MBE are studied theoretically. The theoretical predictions agre e well with the experimental data obtained: by Bottcher et al. [3]. Growth conditions favorable for indium droplet appearance on the growing InGaN sur face are revealed. It is shown that there exists a narrow growth window whe re efficient In incorporation into InGaN can be reached without droplet:for mation. Elastic strain caused by the lattice constant mismatch between the InGaN and the underlying GaN layer affects significantly the critical react ive nitrogen flux necessary to avoid the droplet appearance.