Multiparameter statistical design of experiments for GaN growth optimization

A statistical multi-parameter Design of Experiments for growth optimization of GaN is presented. According to the obtained statistical model, increasi ng the buffer layer V/III ratio:is beneficial for minimizing: the FWHM of t he X-ray diffraction rocking curve for the (002) reflection. Statistical mo dels were obtained also for background electron concentration and Hall mobi lity, but further electrical measurements lead us to the conclusion that th ose models are disturbed by the presence of a highly conductive layer near the low temperature buffer layer. Inclusion of an AlxGa1-xN isolation layer shows a reduction by two orders of magnitude in the measured background co ncentration, as well as a significant increase in Hall mobility, without de gradation:of the crystalline quality.