Low-temperature synthesis of gallium nitride thin films using reactive Rf-magnetron sputtering

The technologies of fabrication of thin film phosphors based on gallium nit ride using rf-magnetron sputtering are developed and properties of films ar e studied. Spectral parameters of rf-discharge plasma emission of nitrogen used as a working gas are investigated. The dependence of GaN thin film dep osition rate on rf-discharge power, substrate temperature and working gas p ressure was estimated. The influence of technological conditions of deposit ion on crystal structure parameters of gallium nitride thin films were inve stigated.