Growth kinetics of GaN in ammonia atmosphere

The kinetics of GaN growth by MBE using ammonia as the reactive nitrogen so urce is studied both under Ga-rich and N-rich conditions. It is shown that adsorption site blocking by Ga and N atoms as well as by surface NH, comple xes is a crucial factor to control thr growth rate of the crystal. Use of N -rich growth conditions easily achieved in ammonia MBE allows one to increa se the GaN growth temperature at least by approximate to 80 to 90 K compare d to plasma-enhanced MBE, that is favorable to improve optical properties o f the grown material.