Citation
Mh. Kim et al., Effect of hydrogen on GaN growth by remote plasma-enhanced metal-organic chemical vapor deposition, PHYS ST S-A, 176(1), 1999, pp. 337-341
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
00318965
→ ACNP
Volume
176
Issue
1
Year of publication
1999
Pages
337 - 341
Database
ISI
SICI code
0031-8965(19991116)176:1<337:EOHOGG>2.0.ZU;2-N
Abstract
The effects of hydrogen on GaN growth by remote plasma-enhanced metal-organ
ic chemical vapor deposition (RPE-MOCVD) were investigated. Hydrogen additi
on changed the gas-phase reaction in the plasma and resulted in a Ga excess
growth condition by scavenging activated nitrogen species, resulting in de
creased carbon incorporation in Ga-sites. Furthermore, the GaN layer had a
smooth surface with Ga polarity, whereas the layer grown without hydrogen a
ddition showed a facetted surface with N polarity.