Prism coupling technique for optical characterization of LP-MOVPE AlxGa1-xN thin film waveguides

Citation
E. Dogheche et al., Prism coupling technique for optical characterization of LP-MOVPE AlxGa1-xN thin film waveguides, PHYS ST S-A, 176(1), 1999, pp. 347-350
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
00318965 → ACNP
Volume
176
Issue
1
Year of publication
1999
Pages
347 - 350
Database
ISI
SICI code
0031-8965(19991116)176:1<347:PCTFOC>2.0.ZU;2-R
Abstract
In this paper. the optical properties of low-pressure metalorganic vapor ph ase epitaxy (LP-MOVPE) grown aluminum gallium nitride thin films have been determined using the prism coupling technique. This method allowed us first to very accurately determine the film thickness and its refractive index ( n(0) = 2.3240). Optical attenuation has been evaluated to be around 2 dB cm (-1) for 1.2 mu m thick multimode planar structures. As second, we have rec onstructed the refractive index profile by using an original formalism suit able for thin film applications. The information provided from this study h as allowed us to study the film homogeneity and the substrate to layer inte rface. In some cases, the optical results have clearly shown a modification of material behavior at the interface, which may be related to structural defects, in agreement with transmission electron microscopy (TEM) analysis.