GaN substrates: Growth and characterization

Single crystal GaN substrates were grown by Hydride-Metal Organic Vapor Pha se Epitaxy (H-MOVPE) on nearly lattice matched LiGaO2 substrates. The key t o obtain high quality GaN films on LiGaO2 was the initial surface nitridati on step. A self-separating technique was developed that leaves tree-standin g flat single crystal GaN without using mechanical or chemical removal of t he underlying substrate. It was determined that the surface nitridation and cooling processes were critical in film-substrate self-separation.