Plasma-assisted MBE growth of GaN on HVPE-GaN substrates

In this article we show that homoepitaxial growth of GaN at elevated temper atures on hydride vapor phase epitaxy grown GaN templates shows an increase d ratio of band edge photoluminescence intensity to yellow emission. The do ping studies at 740 to 800 degrees C resulted in net electron concentration >10(19) cm(-3) for GaN:Si and net hole concentration >10(18) cm(-3) for Ga N:Mg as measured by Hall and C-V measurements. We also present results on h omoepitaxial GaN p-n-junction LEDs grown by plasma-assisted MBE. Top contac t LED turn on at 3.45 V and have series resistance less than 18 Omega. Elec troluminescence peak wavelength and the full width at half maximum (FWHM) a re 374 nm and 14 nm, respectively, at 100 mA driving current.