Growth of InGaN alloy on cubic GaN by metalorganic vapor-phase epitaxy

Cubic InGaN alloys were grown on cubic GaN/GaAs (100) using low-pressure me talorganic vapor-phase epitaxy. A high-resolution cross-sectional transmiss ion electron microscope image revealed their cubic crystal structure. In0.0 3Ga0.97N grown at 770 degrees C showed near band edge emission at 3.12 eV a nd its peak width was 110 meV at room temperature. The indium molar fractio n tended to decrease when the growth temperature increased above 720 degree s C It also decreased as the NH3 flow rate decreased. The lowest energy of the near-band edge emission of these InGaN alloys at room temperature was 2 .98 eV.