Transport and reaction behaviors of precursors during metalorganic vapor phase epitaxy of gallium nitride

Computational fluid dynamics (CFD) based reactor modeling,, combined with g as phase kinetics studies, was used to determine the transport and reaction behaviors within a high performance vertical GaN MOVPE reactor. The typica l thermal fluid behaviors have been initially identified, which are believe d to be closely correlated to the growth of device quality of GaN-based mat erials. The growth chemistry, under these typical fluid conditions, was stu died by increasing the complexity of growth chemistry model in a step-wise fashion. The high gas flow rate typically employed in GaN MOVPE results in a very thin high-temperature now sheet above the growth front. Within this thin high-temperature now sheet. a stratified chemical structure is formed as a result of the unique thermal fluid environment. This stratified struct ure is closely related to the transport and reaction behaviors during GaN M OVPE processes.