The reactive ion etching of gallium nitride by methylchloride/hydrogen

Authors
Dineen, M Thomas, H Humphreys, B McMeekin, SG
Citation
M. Dineen et al., The reactive ion etching of gallium nitride by methylchloride/hydrogen, PHYS ST S-A, 176(1), 1999, pp. 739-742
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
00318965 → ACNP
Volume
176
Issue
1
Year of publication
1999
Pages
739 - 742
Database
ISI
SICI code
0031-8965(19991116)176:1<739:TRIEOG>2.0.ZU;2-E
Abstract
We report the reactive ion etching of gallium nitride (GaN) using methylchl oride/hydrogen, CH3Cl/H-2,. The effect of the rf power input, total gas flo w rate, pressure and gas chemistry on etch rate were investigated and the o ptimum process identified using the orthogonal design method. Etch rates of 100 nm/min have been obtained. A study of the effect of etching on the con tact resistance vias carried out which showed an increase in resistance for etched samples.