GaN cleaning by Ga deposition, reduction and re-evaporation: An SXPS study

The Ga deposition, reduction, and re-evaporation technique commonly used to produce clean n-GaN surfaces and Ag-GaN interface formation on the resulta nt surface, have been investigated by Soft X-ray Photoelectron Spectroscopy (SXPS) and current-voltage measurements. SXPS studies have indicated that Ga deposition produces a band-bending of Delta E-k = + 1.0 eV to higher kin etic energy. Our results show this shift to be a partially reversible proce ss: re-evaporation of the deposited Ga resulted in a Fermi shift of Delta E -k = - 0.6 eV to lower energy. Ag deposition did not cause any further Ferm i shift, indicating that the Fermi level is pinned (2.2 +/- 0.2) eV above t he valence band edge, possibly as a consequence of the cleaning procedure i tself. Current voltage (I-V) measurements have shown a barrier height of 0. 77 eV and an ideality factor of 1.6. Metal induced gap states and the unifi ed defect model are discussed as possible barrier formation mechanisms.