Analysis of surface structures through determination of their composition using STM: Si(100)4x3-In and Si(111)4x1-In reconstructions

Authors
Saranin, AA Zotov, AV Lifshits, VG Ryu, JT Kubo, O Tani, H Harada, T Katayama, M Oura, K
Citation
Aa. Saranin et al., Analysis of surface structures through determination of their composition using STM: Si(100)4x3-In and Si(111)4x1-In reconstructions, PHYS REV B, 60(20), 1999, pp. 14372-14381
Citations number
53
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
60
Issue
20
Year of publication
1999
Pages
14372 - 14381
Database
ISI
SICI code
0163-1829(19991115)60:20<14372:AOSSTD>2.0.ZU;2-N
Abstract
The advantages of scanning tunneling microscopy for the determination of th e composition of the submonolayer metal/silicon interfaces has been demonst rated using Si(100)4x3-In and Si(111)4x1-In as sample reconstructions. It h as been found that the Si(100)4x3-In unit cell is built of 7 In atoms and 6 Si atoms. while the Si(111)4x1-In unit cell contains 3 In atoms and 2 Si a toms in addition to the top Si(111) bilayer. The obtained quantitative info rmation provides the ground for discussion of the plausible atomic arrangem ent of these reconstructions. [S0163-1829(99)00744-4].