Extension of the a-Si : H electronic transport model to mu c-Si : H: use of the mu(0)tau(0) product to correlate electronic transport properties and solar cell performances

Citation
M. Goerlitzer et al., Extension of the a-Si : H electronic transport model to mu c-Si : H: use of the mu(0)tau(0) product to correlate electronic transport properties and solar cell performances, SOL EN MAT, 60(2), 2000, pp. 195-200
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
SOLAR ENERGY MATERIALS AND SOLAR CELLS
ISSN journal
09270248 → ACNP
Volume
60
Issue
2
Year of publication
2000
Pages
195 - 200
Database
ISI
SICI code
0927-0248(20000115)60:2<195:EOTA:H>2.0.ZU;2-K
Abstract
The aim of this communication is to show that it is possible to extend the model of the electronic transport developed for amorphous silicon (a-Si:H) to microcrystalline silicon (mu c-Si:H). By describing the electronic trans port with the mu(0)tau(R) products (mobility x recombination time) as a fun ction of the Fermi level, we observed the same behaviour for both materials , indicating a similar type of recombination. Moreover, applying the normal ised mu(0)tau(0) product (mobility x life-time) obtained by combining the p hotoconductivity (sigma(photo)) and the ambipolar diffusion length (L-amb) measured in individual layers, we are able, as in the case of a-Si:H, to pr edict the quality of the solar cells incorporating these layers as the acti ve [i] layer. (C) 2000 Elsevier Science B.V. All rights reserved.