Extension of the a-Si : H electronic transport model to mu c-Si : H: use of the mu(0)tau(0) product to correlate electronic transport properties and solar cell performances
M. Goerlitzer et al., Extension of the a-Si : H electronic transport model to mu c-Si : H: use of the mu(0)tau(0) product to correlate electronic transport properties and solar cell performances, SOL EN MAT, 60(2), 2000, pp. 195-200
The aim of this communication is to show that it is possible to extend the
model of the electronic transport developed for amorphous silicon (a-Si:H)
to microcrystalline silicon (mu c-Si:H). By describing the electronic trans
port with the mu(0)tau(R) products (mobility x recombination time) as a fun
ction of the Fermi level, we observed the same behaviour for both materials
, indicating a similar type of recombination. Moreover, applying the normal
ised mu(0)tau(0) product (mobility x life-time) obtained by combining the p
hotoconductivity (sigma(photo)) and the ambipolar diffusion length (L-amb)
measured in individual layers, we are able, as in the case of a-Si:H, to pr
edict the quality of the solar cells incorporating these layers as the acti
ve [i] layer. (C) 2000 Elsevier Science B.V. All rights reserved.