Transport properties of Nb/InAs(2DEG)/Nb Josephson field-effect transistors

Authors
Richter, A Koch, M Matsuyama, T Merkt, U
Citation
A. Richter et al., Transport properties of Nb/InAs(2DEG)/Nb Josephson field-effect transistors, SUPERCOND S, 12(11), 1999, pp. 874-876
Citations number
4
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SUPERCONDUCTOR SCIENCE & TECHNOLOGY
ISSN journal
09532048 → ACNP
Volume
12
Issue
11
Year of publication
1999
Pages
874 - 876
Database
ISI
SICI code
0953-2048(199911)12:11<874:TPONJF>2.0.ZU;2-L
Abstract
We investigate transport properties of mesoscopic semiconductor-superconduc tor weak links. The superconducting Nb electrodes of our junctions are coup led by the two-dimensional electron gas of an InAs heterostructure grown on a GaAs substrate. We report on the properties of Josephson field-effect tr ansistors utilizing these junctions.