Superconducting NbN films grown using pulsed laser deposition for potential application in internally shunted Josephson junctions

Citation
A. Bhat et al., Superconducting NbN films grown using pulsed laser deposition for potential application in internally shunted Josephson junctions, SUPERCOND S, 12(11), 1999, pp. 1030-1032
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SUPERCONDUCTOR SCIENCE & TECHNOLOGY
ISSN journal
09532048 → ACNP
Volume
12
Issue
11
Year of publication
1999
Pages
1030 - 1032
Database
ISI
SICI code
0953-2048(199911)12:11<1030:SNFGUP>2.0.ZU;2-C
Abstract
We have grown superconducting NbN films using a pulsed KrF laser for potent ial use as superconducting electrodes in SNS Josephson junctions being deve loped for nonlatching logic applications. The NbN films show a superconduct ing transition of 16 K using an Nb target in background N-2 gas. The T-c de pendence on N-2 pressure in the range of 50-80 mTorr was investigated at a growth temperature of 600 degrees C. The NbN films were grown on MgO(100) a nd amorphous SiNx/Si substrates. In the latter case, the films had a lower T-c, and appeared amorphous from x-ray diffraction measurements, while thos e on the MgO(100) substrates were strongly textured. AFM measurements revea l RMS surface roughness as low as 1 nm, over a 5 mu m x 5 mu m area, indica ting that these films appear suitable for SNS junctions.