Amorphous SixC1-x films, with x ranging from 0.30 to 0.70, were grown by hi
gh-energy ion beam deposition starting from a methane-silane gas mixture. X
PS analysis of the samples shows that it is possible to incorporate silicon
to the amorphous carbon matrix giving an Si/C ratio depending on the metha
ne-silane gas mixture. Raman spectra of the thermally annealed films indica
te that the silicon incorporation in a-C films increases their thermal stab
ility. There is no evidence of a complete graphitization up to 900 degrees
C, while in a-C samples graphitization occurs at about 500 degrees C. This
result shows that thermal stability is a function of the film composition.
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