A dense and homogeneous NiAl compound target has been fabricated via a nove
l, one-step process - combustion synthesis simultaneously coupled with hot
pressing. NiAl thin films have been successfully deposited from this NiAl t
arget onto various substrates. including stainless steel, glass, and Si[100
] wafer, by using RF magnetron sputtering. The films have been characterize
d using X-ray diffraction, X-ray photoelectron spectroscopy, scanning elect
ron microscopy, and scanning transmission electron microscopy. The texture,
composition, and microstructure of the NiAl films change with the depositi
on power used. The NiAl thin films deposited using 500 W RF power exhibited
a microstructure of a 0.5-0.7 mu m amorphous layer adjacent to the substra
te and a dense and columnar zone T crystalline microstructure which had a p
referred orientation [110] which is the close-packed direction for NiAl. Th
e results confirm the feasibility of producing high quality NiAl thin films
from a NiAl compound PVD target. By successfully manipulating the synthesi
s parameters of the target and deposition parameters of the film, a NiAl th
in film can be designed to meet the needs for various high temperature appl
ications. (C) 1999 Elsevier Science S.A. All rights reserved.