An apparatus for in-situ or sequential plasma immersion ion beam treatmentin combination with r.f. sputter deposition or triode d.c. sputter deposition

Plasma immersion ion implantation (PIII) is a suitable method for treating the near-surface zone of materials by incorporating energetic ions. This te chnique can be combined with physical vapour deposition, either sequentiall y or simultaneously. An apparatus for PIII and sputter deposition, based on radio-frequency plasma excitation is described. Results on nitrogen PIII o f a titanium alloy and formation of silicon carbide films by silicon sputte r deposition combined with subsequent methane PIII are presented. (C) 1999 Elsevier Science S.A. All rights reserved.