Various types of plasma sources, such as ECR, planar ICP (or TCP), helical
ICP, Helicon, Helical Resonator, or SWP, have been researched to improve th
e plasma density or to remove or decrease the micro-loading effect effectiv
ely. Among them, ICP type plasma source, well known to provide uniform high
density plasma, has been improved to provide better quality. Here, we prop
ose a novel technique, named 'enhanced ICP', to accommodate better process
quality, and we report improved results, a uniform and stable plasma with l
ow electron temperature and high ion density. A photo-resist etch uniformit
y of below 1% within 10 cm in diameter has been accomplished with improved
plasma density and the low electron temperature of 1 eV. It was obtained by
applying an axial magnetic field with periodic on/off control of current i
n the Helmholtz coil surrounding the normal ICP plasma chamber. The frequen
cy control of the coil current, which might vary as the chamber geometry or
the operating condition changes, is considered to resonate the transition
between the novel wave modes of plasma to enhance the process uniformity. (
C) 1999 Elsevier Science S.A. All rights reserved.