An investigation is made of the diffusion of boron and phosphorus impuritie
s in macroporous silicon with a regular structure of deep cylindrical pores
, for which through doping of the walls was achieved. The similar to 150 mu
m layers obtained were quasiuniformly doped and had a planar diffusion fro
nt, and their electric parameters were very similar to those of the doped s
ingle crystal. It is demonstrated that deep diffusion of phosphorus may be
used to fabricate n-n(+) structures. (C) 1999 American Institute of Physics
. [S1063-7850(99)01212-4].