Deep diffusion doping of macroporous silicon

Citation
Ev. Astrova et al., Deep diffusion doping of macroporous silicon, TECH PHYS L, 25(12), 1999, pp. 958-961
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
TECHNICAL PHYSICS LETTERS
ISSN journal
10637850 → ACNP
Volume
25
Issue
12
Year of publication
1999
Pages
958 - 961
Database
ISI
SICI code
1063-7850(199912)25:12<958:DDDOMS>2.0.ZU;2-P
Abstract
An investigation is made of the diffusion of boron and phosphorus impuritie s in macroporous silicon with a regular structure of deep cylindrical pores , for which through doping of the walls was achieved. The similar to 150 mu m layers obtained were quasiuniformly doped and had a planar diffusion fro nt, and their electric parameters were very similar to those of the doped s ingle crystal. It is demonstrated that deep diffusion of phosphorus may be used to fabricate n-n(+) structures. (C) 1999 American Institute of Physics . [S1063-7850(99)01212-4].