Ms. Yunusov et al., Mechanisms for thermal stability of the electrophysical properties of overcompensated n-Si < B,S >, TECH PHYS L, 25(12), 1999, pp. 969-970
Thermal annealing was used to study silicon samples having different sulfur
concentrations. It was established that the temperature at which the sulfu
r centers decay depends on the concentration of sulfur atoms N-s in the ove
rcompensated silicon. As the distance between the impurities (N-s(-1/3)) de
creases, the decay temperature increases. The effect can be attributed to c
haracteristic features of the distribution of the compensating sulfur impur
ity atoms inside a region of fluctuation, formed in silicon during doping.
(C) 1999 American Institute of Physics. [S1063-7850(99)01612-2].