Mechanisms for thermal stability of the electrophysical properties of overcompensated n-Si < B,S >

Thermal annealing was used to study silicon samples having different sulfur concentrations. It was established that the temperature at which the sulfu r centers decay depends on the concentration of sulfur atoms N-s in the ove rcompensated silicon. As the distance between the impurities (N-s(-1/3)) de creases, the decay temperature increases. The effect can be attributed to c haracteristic features of the distribution of the compensating sulfur impur ity atoms inside a region of fluctuation, formed in silicon during doping. (C) 1999 American Institute of Physics. [S1063-7850(99)01612-2].