Citation
D. Rodewald et al., GaN derived from carbodiimide-based polymer precursors, ADVAN MATER, 11(18), 1999, pp. 1502
Citations number
21
Categorie Soggetti
Multidisciplinary,"Material Science & Engineering
Journal title
ADVANCED MATERIALS
ISSN journal
09359648
→ ACNP
Volume
11
Issue
18
Year of publication
1999
Database
ISI
SICI code
0935-9648(199912)11:18<1502:GDFCPP>2.0.ZU;2-J
Abstract
Fine and green light-emitting diodes and laser diodes are often fabricated
using semiconducting GaN. Here polymers derived from gallium carbodiimide a
re used as precursors to crystalline GaN bulk materials and films, the tran
sformation being achieved via thermolysis in ammonia gas. The Figure is a T
EM image of GaN powder synthesized in this manner.