Radiative recombination centers induced by stacking-fault pairs in ZnSe/ZnMgSSe quantum-well structures

Stacking-fault pairs in ZnSe/ZnMgSSe quantum-well structures are found to i nduce enhanced radiative recombination visible as pairs of bright spots in microphotoluminescence intensity maps. Structural investigation by atomic-f orce microscopy and transmission electron microscopy (plan view as well as cross section) reveal that a widening and bending of quantum wells occurs w hen they are intersected by Frank-type stacking faults. The enlargement of the well width by up to 12 bilayers evokes an efficient localization of exc itons. The localizing potential related to Shockley-type stacking-fault pai rs is found to be much shallower. (C) 1999 American Institute of Physics. [ S0003-6951(99)01551-X].