Shear piezoelectric coefficients of gallium nitride and aluminum nitride

Citation
S. Muensit et al., Shear piezoelectric coefficients of gallium nitride and aluminum nitride, APPL PHYS L, 75(25), 1999, pp. 3965-3967
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
75
Issue
25
Year of publication
1999
Pages
3965 - 3967
Database
ISI
SICI code
0003-6951(199912)75:25<3965:SPCOGN>2.0.ZU;2-S
Abstract
We have developed a direct method of measuring the shear strain using a las er-based interferometer. The method was applied to the measurement of the d (15) coefficient for wurtzite GaN and AlN. A value for d(15) of 3.6 +/- 0.2 pm V-1 for AlN has been obtained, in good agreement with values quoted in the literature. The value of d(15) for GaN has also been measured to be 3.1 +/- 0.2 pm V-1. (C) 1999 American Institute of Physics. [S0003-6951(99)025 51-6].