Defect-related local-electric-field impact on p-n junction parameters

Authors
Czerwinski, A
Citation
A. Czerwinski, Defect-related local-electric-field impact on p-n junction parameters, APPL PHYS L, 75(25), 1999, pp. 3971-3973
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
75
Issue
25
Year of publication
1999
Pages
3971 - 3973
Database
ISI
SICI code
0003-6951(199912)75:25<3971:DLIOPJ>2.0.ZU;2-G
Abstract
A method is proposed to accurately determine the electric-field impact on a p-n junction. The generation current component is separated from the total leakage current, with correction for the reverse-bias-dependent diffusion current. The sources of the electric-field enhancement are considered. The type of the dominant center, its distribution and energy, the local electri c field due to imperfections, and the mechanical stress are determined. (C) 1999 American Institute of Physics. [S0003-6951(99)03051-X].