Growth of Si/3C-SiC/Si(100) heterostructures by pulsed supersonic free jets

We have investigated the epitaxial growth of multilayer structures of Si/3C -SiC/Si(100) by pulsed supersonic free jets of methylsilane (CH3SiH3) for S iC growth and trisilane (Si3H8) for Si growth. Epitaxial Si layers were obt ained only on very thin (approximate to 3 nm) 3C-SiC epitaxial layers, whil e polycrystalline Si was grown on thicker 3C-SiC layers. It was also found that the transition regions with a thickness of approximate to 1 nm existed at the interface between epitaxial 3C-SiC and Si layers by high-resolution transmission electron microscopy observation. These results suggest that t he surface roughness and thickness of the 3C-SiC layer play an important ro le for epitaxial growth of Si. (C) 1999 American Institute of Physics. [S00 03-6951(99)03351-3].