Critical issues for the growth of high-quality (Al,Ga)N/GaN and GaN/(In,Ga)N heterostructures on SiC(0001) by molecular-beam epitaxy

Authors
Brandt, O Muralidharan, R Waltereit, P Thamm, A Trampert, A von Kiedrowski, H Ploog, KH
Citation
O. Brandt et al., Critical issues for the growth of high-quality (Al,Ga)N/GaN and GaN/(In,Ga)N heterostructures on SiC(0001) by molecular-beam epitaxy, APPL PHYS L, 75(25), 1999, pp. 4019-4021
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
75
Issue
25
Year of publication
1999
Pages
4019 - 4021
Database
ISI
SICI code
0003-6951(199912)75:25<4019:CIFTGO>2.0.ZU;2-O
Abstract
We identify and discuss the essential strategies for the growth of (Al,Ga)N /GaN and GaN/(In,Ga)N heterostructures on SiC(0001) by both plasma-assisted and reactive molecular-beam epitaxy. Substrate preparation, nucleation, an d growth conditions are optimized for simultaneously satisfying the require ments of high structural, morphological, optical, and electrical quality. T he results demonstrate that molecular-beam epitaxy is a competitive techniq ue for the growth of group-III nitrides. (C) 1999 American Institute of Phy sics. [S0003-6951(99)00151-5].