2.6 mu m optically pumped vertical-cavity surface-emitting laser in the CdHgTe system

Citation
C. Roux et al., 2.6 mu m optically pumped vertical-cavity surface-emitting laser in the CdHgTe system, APPL PHYS L, 75(24), 1999, pp. 3763-3765
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
75
Issue
24
Year of publication
1999
Pages
3763 - 3765
Database
ISI
SICI code
0003-6951(199912)75:24<3763:2MMOPV>2.0.ZU;2-R
Abstract
We present results of a midinfrared vertical-cavity surface-emitting laser operating at 2.63 mu m made of CdHgTe alloys. The resonator is constituted of two dielectric YF3/ZnS mirrors deposited after growth and after removal of the substrate. The top mirror reflectivity is increased step by step by deposition of an additional stack period allowing us to study the effect of mirror loss on lasing properties. With a reflectivity of 98.1% lasing is o bserved up to 190 K. The pulsed threshold power is 1.7 kW/cm(2) at 80 K. Th e characteristic temperature is T-0=113 K. (C) 1999 American Institute of P hysics. [S0003-6951(99)02850-8].