Resputtering during the growth of pulsed-laser-deposited metallic films invacuum and in an ambient gas

To determine the effective sputter yield during pulsed-laser deposition a m ethod by measuring the deposition rate on tilted substrates is proposed. Un der vacuum conditions, sputter yields of up to 0.17 and 0.55 were found at a laser fluence of 4.5 J/cm(2) for Fe and Ag, respectively. These strong re sputtering effects are induced by the large fraction of energetic ions occu rring during deposition. With decreasing laser fluence or increasing Ar gas pressure, the sputter yields are reduced due to a decrease of the kinetic energy of the ions. For the deposition of stoichiometric films, an optimum Ar partial pressure of about 0.04 mbar exists, where the deposition rate is highest and the sputter yield is reduced. (C) 1999 American Institute of P hysics. [S0003-6951(99)03753-5].