Growth and physical properties of epitaxial metastable cubic TaN(001)

Citation
Cs. Shin et al., Growth and physical properties of epitaxial metastable cubic TaN(001), APPL PHYS L, 75(24), 1999, pp. 3808-3810
Citations number
23
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
75
Issue
24
Year of publication
1999
Pages
3808 - 3810
Database
ISI
SICI code
0003-6951(199912)75:24<3808:GAPPOE>2.0.ZU;2-X
Abstract
We report the growth of epitaxial metastable B1 NaCl structure TaN(001) lay ers. The films were grown on MgO(001) at 600 degrees C by ultrahigh vacuum reactive magnetron sputter deposition in mixed Ar/N-2 discharges maintained at 20 mTorr (2.67 Pa). X-ray diffraction and transmission electron microsc opy results establish the epitaxial relationship as cube-on-cube, (001)(TaN )parallel to(001)(MgO) with [100](TaN)parallel to[100](MgO), while Rutherfo rd backscattering spectroscopy shows that the layers are overstoichiometric with N/Ta=1.22 +/- 0.02. The room-temperature resistivity is 225 mu Omega cm with a small negative temperature dependence between 20 and 400 K. The h ardness and elastic modulus, as determined by nanoindentation measurements, are 30.8 +/- 0.9 and 457 +/- 16 GPa, respectively. (C) 1999 American Insti tute of Physics. [S0003-6951(99)04450-2].